Neutral beam etching for device isolation in AlGaN/GaN HEMTs

نویسندگان

  • Fuyumi Hemmi
  • Cedric Thomas
  • Yi-Chun Lai
  • Akio Higo
  • Alex Guo
  • Shireen Warnock
  • A. del Alamo
  • Seiji Samukawa
  • Taiichi Otsuji
  • Tetsuya Suemitsu
چکیده

1 Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, 980-8577 Sendai, Japan 2 Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, 980-8577 Sendai, Japan Advanced Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, 980-8577 Sendai, Japan Microsystems Technology Laboratories, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139, USA

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تاریخ انتشار 2017