Neutral beam etching for device isolation in AlGaN/GaN HEMTs
نویسندگان
چکیده
1 Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, 980-8577 Sendai, Japan 2 Institute of Fluid Science, Tohoku University, 2-1-1 Katahira, Aoba-ku, 980-8577 Sendai, Japan Advanced Institute of Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, 980-8577 Sendai, Japan Microsystems Technology Laboratories, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139, USA
منابع مشابه
Effect of electron-beam irradiation on leakage current of AlGaN/GaN HEMTs on sapphire
This study examined the effect of electronbeam (E-beam) irradiation on the electrical properties of n-GaN, AlGaN and AlGN/GaN structures on sapphire substrates. E-beam irradiation resulted in a significant decrease in the gate leakage current of the n-GaN, AlGaN and HEMT structure from 4.0×10 -4 A, 6.5×10 -5 A, 2.7×10 -8 A to 7.7×10 -5 A, 7.7×10 -6 A, 4.7×10 -9 A, respectively, at a drain volta...
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